MPSA28 MPSA29 www.centralsemi.com SILICON DESCRIPTION: NPN DARLINGTON TRANSISTORS The CENTRAL SEMICONDUCTOR MPSA28 and MPSA29 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPSA28 MPSA29 UNITS A Collector-Base Voltage V 80 100 V CBO Collector-Emitter Voltage V 80 100 V CES Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) MPSA28 MPSA29 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=60V - 100 - - nA CBO CB I V=80V - - - 100 nA CBO CB I V=60V - 500 - - nA CES CE I V=80V - - - 500 nA CES CE I V=10V - 100 - 100 nA EBO EB BV I=100A 80 - 100 - V CBO C BV I=100A 80 - 100 - V CES C BV I=10A 12 - 12 - V EBO E V I =10mA, I=10A - 1.2 - 1.2 V CE(SAT) C B V I =100mA, I=100A - 1.5 - 1.5 V CE(SAT) C B V V =5.0V, I=100mA - 2.0 - 2.0 V BE(ON) CE C h V =5.0V, I=10mA 10,000 - 10,000 - FE CE C h V =5.0V, I=100mA 10,000 - 10,000 - FE CE C f V =5.0V, I=10mA, f=100MHz 125 - 125 - MHz T CE C C V =10V, I=0, f=1.0MHz - 8.0 - 8.0 pF ob CB E R0 (28-May 2013)MPSA28 MPSA29 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (28-May 2013) www.centralsemi.com