DATA SHEET www.onsemi.com NPN Darlington Transistor MPSA29 TO923 CASE 135AN Description Straight Lead 1 This device is designed for applications requiring extremely high 2 Bulk Packing 3 current gain at collector currents to 500 mA. Sourced from process 03. See MPSA28 for characteristics. Features TO923 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 135AR Compliant Bent Lead 1 Tape & Reel 2 3 ABSOLUTE MAXIMUM RATINGS (Notes 1, 2) Ammo Packing (Values are at T = 25C unless otherwise noted) A 1. Emitter Parameter Symbol Value Unit 2. Base 3. Collector CollectorEmitter Voltage V 100 V CEO CollectorBase Voltage V 100 V CBO MARKING DIAGRAM EmitterBase Voltage V 12 V EBO Collector Current Continuous I 800 mA C Operating and Storage Junction T , T 55 to 150 C AMP J STG Temperature Range SA29 YWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steadystate limits. onsemi should be consulted on applications involving pulsed or lowdutycycle operations. A = Assembly Code MPSA29 = Device Code YWW = Date Code THERMAL CHARACTERISTICS (Note 3) (Values are at T = 25C unless otherwise noted) A Parameter Symbol Value Unit ORDERING INFORMATION Total Device Dissipation P 625 mW D See detailed ordering and shipping information on page 2 of this data sheet. Dissipation Derate Above 25C P 5.0 mW/C D Thermal Resistance, JunctiontoCase R 83.3 C/W JC Thermal Resistance, 200 C/W R JA JunctiontoAmbient 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: October, 2021 Rev. 3 MPSA29/DMPSA29 ELECTRICAL CHARACTERISTICS (Note 4) (Values are at T = 25C unless otherwise noted) A Symbol Parameter Conditions Min. Max. Unit BV CollectorEmitter Breakdown Voltage I = 100 A, I = 0 100 V CEO C B BV CollectorBase Breakdown Voltage I = 100 A, I = 0 100 V CBO C E BV EmitterBase Breakdown Voltage I = 10 A, I = 0 12 V EBO E C I Collector CutOff Current V = 80 V, I = 0 100 nA CBO CB E I Collector CutOff Current V = 80 V, I = 0 500 nA CES CE E I Emitter CutOff Current V = 10 V, I = 0 100 nA EBO EB C h DC Current Gain V = 5.0 V, I = 10 mA 10,000 FE CE C V = 5.0 V, I = 100 mA 10,000 CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.01 mA 1.2 V CE C B I = 100 mA, I = 0.1 mA 1.5 V C B V (on) BaseEmitter On Voltage I = 100 mA, V = 5.0 V 2.0 V BE C CE f Current Gain Bandwidth Product I = 15 mA, V = 5.0 V, f = 100 MHz 125 MHz T C CE C Output Capacitance V = 10 V, I = 0, f = 1.0 MHz 8.0 pF obo CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width 300 s, duty cycle 2.0% ORDERING INFORMATION Part Number Top Mark Package Shipping MPSA29 MPSA29 TO923, case 135AN (PbFree) 10,000 Units/ Bulk Box MPSA29D26Z MPSA29 TO923, case 135AR (PbFree) 2,000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2