MPSA77 Central Semiconductor

MPSA75 MPSA76 MPSA77 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR MPSA75 series PNP DARLINGTON TRANSISTORS devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPSA75 MPSA76 MPSA77 UNITS A Collector-Base Voltage V 40 50 60 V CBO Collector-Emitter Voltage V 40 50 60 V CES Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) MPSA75 MPSA76 MPSA77 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=30V - 100 - - - - nA CBO CB I V=40V - - - 100 - - nA CBO CB I V=50V - - - - - 100 nA CBO CB I V=30V - 500 - - - - nA CES CE I V=40V - - - 500 - - nA CES CB I V=50V - - - - - 500 nA CES CB I V =10V - 100 - 100 - 100 nA EBO EB BV I=100A 40 - 50 - 60 - V CBO C BV I=100A 40 - 50 - 60 - V CES C V I =100mA, I=0.1mA - 1.5 - 1.5 - 1.5 V CE(SAT) C B V V =5.0V, I=100mA - 2.0 - 2.0 - 2.0 V BE(ON) CE B h V =5.0V, I=10mA 10K - 10K - 10K - FE CE C h V =5.0V, I=100mA 10K - 10K - 10K - FE CE C f V =5.0V, I=10mA 125 - 125 - 125 - MHz T CE C R1 (18-March 2014)MPSA75 MPSA76 MPSA77 SILICON PNP DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (18-March 2014) www.centralsemi.com