MPSA18 Discrete POWER & Signal Technologies MPSA18 TO-92 C B E NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1 A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO VCBO Collector-Base Voltage 45 V V Emitter-Base Voltage 6.5 V EBO I Collector Current - Continuous 100 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSA18 P Total Device Dissipation 625 mW D Derate above 25 C 5.0 mW/ C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA 1997 Fairchild Semiconductor CorporationMPSA18 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 10 mA, I = 0 45 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 45 V (BR)CBO C E V(BR)EBO Emitter-Base Breakdown Voltage I = 10 A, I = 0 6.5 V E C I Collector Cutoff Current V = 30 V, I = 0 50 nA CBO CB E ON CHARACTERISTICS* h DC Current Gain 400 FE V = 5.0 V, I = 10 A CE C V = 5.0 V, I = 100 A 500 CE C 500 V = 5.0 V, I = 1.0 mA CE C V = 5.0 V, I = 10 mA 500 1500 CE C Collector-Emitter Saturation Voltage I = 10 mA, I = 0.5 mA 0.2 V V C B CE(sat) IC = 50 mA, IB = 5.0 mA 0.3 V V Base-Emitter On Voltage VCE = 5.0 V, IC = 1.0 mA 0.7 V BE(on) SMALL SIGNAL CHARACTERISTICS Collector-Base Capacitance V = 5.0 V, f = 1.0 MHz 3.0 pF C CB cb Emitter-Base Capacitance V = 0.5 V, f = 1.0 MHz 6.5 pF C EB eb Current Gain - Bandwidth Product I = 1.0 mA, V = 5.0 V, 100 MHz f C CE T f = 100 MHz 1.5 dB NF Noise Figure V = 5.0 V, I = 100 A, CE C R = 10 k, f = 1.0 kHz, S *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%