X-On Electronics has gained recognition as a prominent supplier of MJ15023G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJ15023G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJ15023G ON Semiconductor

MJ15023G electronic component of ON Semiconductor
MJ15023G ON Semiconductor
MJ15023G Bipolar Transistors - BJT
MJ15023G  Semiconductors

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See Product Specifications
Part No. MJ15023G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 16A 200V 250W PNP
Datasheet: MJ15023G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 9.018 ea
Line Total: USD 63.13 
Availability - 412
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ: 7  Multiples: 5
Pack Size: 5
Availability Price Quantity
412
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 7
Multiples : 5
7 : USD 9.018
25 : USD 6.125
100 : USD 5.1875
300 : USD 4.95
500 : USD 4.925
1000 : USD 4.9
2500 : USD 4.875
5000 : USD 4.85

43
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 14.448
2 : USD 9.954
6 : USD 9.408

2231
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 100
Multiples : 100
100 : USD 5.112

412
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 25
Multiples : 5
25 : USD 12.1576
30 : USD 8.918
100 : USD 7.2625
300 : USD 6.93
500 : USD 6.895

4018
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 71
Multiples : 1
71 : USD 6.6719
100 : USD 6.3437
500 : USD 6
1000 : USD 5.6719
10000 : USD 5.3437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJ15023G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ15023G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. MJ15023 (PNP), MJ15025 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V CEO(sus) (I = 100 mAdc, I = 0) C B MJ15023 200 MJ15025 250 Collector Cutoff Current I Adc CEX (V = 200 Vdc, V = 1.5 Vdc) CE BE(off) MJ15023 250 (V = 250 Vdc, V = 1.5 Vdc) CE BE(off) MJ15025 250 Collector Cutoff Current I Adc CEO (V = 150 Vdc, I = 0) CE B MJ15023 500 (V = 200 Vdc, I = 0) CE B MJ15025 500 Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) CE B Both 500 SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 0.5 s (nonrepetitive)) 5 CE (V = 80 Vdc, t = 0.5 s (nonrepetitive)) 2 CE ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 4 Vdc) 15 60 C CE (I = 16 Adc, V = 4 Vdc) 5 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.4 C B (I = 16 Adc, I = 3.2 Adc) 4.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8 Adc, V = 4 Vdc) 2.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) 4 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 600 CB E test 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 100 There are two limitations on the powerhandling ability of 50 a transistor: average junction temperature and second T = 25C C breakdown. Safe operating area curves indicate I V C CE 20 limits of the transistor that must be observed for reliable 10 operation i.e., the transistor must not be subjected to greater 5.0 dissipation than the curves indicate. The data of Figure 1 is based on T = 200 C T is J(pk) C variable depending on conditions. At high case 1.0 BONDING WIRE LIMITED temperatures, thermal limitations will reduce the power that THERMAL LIMITATION can be handled to values less than the limitations imposed by (SINGLE PULSE) second breakdown. SECOND BREAKDOWN LIMITED 0.2 0.1 0.1 0.2 0.5 10 20 50 100 250 500 1 k V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. ActiveRegion Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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