MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon MJ11028, MJ11030, MJ11032 (NPN) COLLECTOR COLLECTOR PNP NPN MJ11029 MJ11028 MJ11033 MJ11030 MJ11032 BASE BASE 3.0 k 25 3.0 k 25 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) MJ11028, MJ11029 V 60 Vdc (BR)CEO (I = 1 00 mAdc, I = 0) MJ11030 90 C B MJ11032, MJ11033 120 CollectorEmitter Leakage Current I mAdc CER (V = 60 Vdc, R = 1 k ) MJ11028, MJ11029 2 CE BE (V = 90 Vdc, R = 1 k ) MJ11030 2 CE BE (V = 120 Vdc, R = 1 k ) MJ11032, MJ11033 2 CE BE 10 (V = 60 Vdc, R = 1 k , T = 150 C) MJ11028, MJ11029 CE BE C 10 (V = 120 Vdc, R = 1 k , T = 150 C) MJ11032, MJ11033 CE BE C Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 5 BE C CollectorEmitter Leakage Current I mAdc CEO (V = 50 Vdc, I = 0) 2 CE B ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 25 Adc, V = 5 Vdc) 1 k 18 k C CE (I = 50 Adc, V = 5 Vdc) 400 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 25 Adc, I = 250 mAdc) 2.5 C B (I = 50 Adc, I = 500 mAdc) 3.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 25 Adc, I = 200 mAdc) 3.0 C B (I = 50 Adc, I = 300 mAdc) 4.5 C B 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.