MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 0.584 R C/W JC ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 200 mAdc, I = 0) MJ14001 60 C B MJ14002, MJ14003 80 Collector Cutoff Current I mA CEO (V = 30 Vdc, I = 0) MJ14001 1.0 CE B (V = 40 Vdc, I = 0) MJ14402, MJ14003 1.0 CE B Collector Cutoff Current I mA CEX (V = 60 Vdc, V = 1.5 V) MJ14001 1.0 CE BE(off) (V = 80 Vdc, V = 1.5 V) MJ14002, MJ14003 1.0 CE BE(off) Collector Cutoff Current I mA CBO (V = 60 Vdc, I = 0) MJ14001 1.0 CB E (V = 80 Vdc, I = 0) MJ14002, MJ14003 1.0 CB E Emitter Cutoff Current I 1.0 mA EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 25 Adc, V = 3.0 V) 30 C CE (I = 50 Adc, V = 3.0 V) 15 100 C CE (I = 60 Adc, V = 3.0 V) 5.0 C CE CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) 1.0 C B (I = 50 Adc, I = 5.0 Adc) 2.5 C B (I = 60 Adc, I = 12 Adc) 3.0 C B BaseEmitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 25 Adc, I = 2.5 Adc) 2.0 C B (I = 50 Adc, I = 5.0 Adc) 3.0 C B (I = 60 Adc, I = 12 Adc) 4.0 C B DYNAMIC CHARACTERISTICS Output Capacitance C 2000 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 100 There are two limitations on the power handling ability of 5.0 ms 1.0 ms 1.0 s 70 a transistor: average junction temperature and second 50 30 breakdown. Safe operating area curves indicate I V C CE 20 dc limits of the transistor that must be observed for reliable 10 operation: i.e., the transistor must not be subjected to greater 7.0 T = 25C C dissipation than the curves indicate. 5.0 WIRE BOND LIMIT 3.0 The data of Figure 2 is based on T = 200 C T is J(pk) C THERMAL LIMIT 2.0 variable depending on conditions. Second breakdown pulse SECOND BREAKDOWN LIMIT 1.0 limits are valid for duty cycles to 10% provided T J(pk) 0.7 200 C. T may be calculated from the data in 0.5 J(pk) 0.3 Figure 13. At high case temperatures, thermal limitations MJ14001 0.2 will reduce the power that can be handled to values less than MJ14002, MJ14003 0.1 the limitations imposed by second breakdown. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V , COLLECTOREMITTER VOLTAGE (VOLTS) CE Figure 2. Maximum Rated Forward Biased Safe Operating Area