X-On Electronics has gained recognition as a prominent supplier of MJ15001G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJ15001G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJ15001G ON Semiconductor

MJ15001G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJ15001G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 15A 140V 200W NPN
Datasheet: MJ15001G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.931 ea
Line Total: USD 7.93 
Availability - 611
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
188
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 5
5 : USD 6.0875
25 : USD 5.7375
100 : USD 5.3625
300 : USD 5.225
500 : USD 5.0375
1000 : USD 4.9625
2500 : USD 4.8875
5000 : USD 4.8125

611
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 7.931
10 : USD 5.467
50 : USD 5.126
100 : USD 4.719
200 : USD 4.576
1000 : USD 4.477

1
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 9.618
3 : USD 6.16
8 : USD 5.824
1000 : USD 5.614

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJ15001G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ15001G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. MJ15001 (NPN), MJ15002 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V 140 Vdc CEO(sus) (I , = 200 mAdc, I = 0) C B Collector Cutoff Current I CEX (V = 140 Vdc, V = 1.5 Vdc) 100 Adc CE BE(off) (V = 140 Vdc, V = 1.5 Vdc, T = 150C) 2.0 mAdc CE BE(off) C Collector Cutoff Current I 250 Adc CEO (V = 140 Vdc, I = 0) CE B Emitter Cutoff Current I 100 Adc EBO (V = 5 Vdc, I = 0) EB C SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 40 Vdc, t = 1 s (nonrepetitive)) 5.0 CE (V = 100 Vdc, t = 1 s (nonrepetitive)) 0.5 CE ON CHARACTERISTICS DC Current Gain h 25 150 FE (I = 4 Adc, V = 2 Vdc) C CE CollectorEmitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 4 Adc, I = 0.4 Adc) C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 4 Adc, V = 2 Vdc) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 2.0 MHz T (I = 0.5 Adc, V = 10 Vdc, f = 0.5 MHz) C CE test Output Capacitance C 1000 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 200 There are two limitations on the power handling ability of T = 25C C a transistor: average junction temperature and second 10 breakdown. Safe operating area curves indicate I V C CE 7 limits of the transistor that must be observed for reliable 5 operation i.e., the transistor must not be subjected to greater 3 dissipation than the curves indicate. 2 The data of Figure 1 is based on T = 200C T is J (pk) C variable depending on conditions. At high case T = 200C J 1 temperatures, thermal limitations will reduce the power that BONDING WIRE LIMITED 0.7 THERMAL LIMITATION (SINGLE PULSE) can be handled to values less than the limitations imposed by 0.5 SECOND BREAKDOWN LIMITED second breakdown. CURVES APPLY BELOW RATED V 0.3 CEO 0.2 2 3 5 7 10 20 30 50 70 100 200 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. ActiveRegion Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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