X-On Electronics has gained recognition as a prominent supplier of MJ15022G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJ15022G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJ15022G ON Semiconductor

MJ15022G electronic component of ON Semiconductor
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Part No.MJ15022G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 16A 200V 250W NPN
Datasheet: MJ15022G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 6.0625 ea
Line Total: USD 30.31 
Availability - 373
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
373
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 5
5 : USD 6.0625
25 : USD 5.725
100 : USD 5.35
300 : USD 5.2125
500 : USD 5.0125
1000 : USD 4.9375
2500 : USD 4.8625
5000 : USD 4.8

61
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 10.836
3 : USD 8.274
6 : USD 7.826

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJ15022G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ15022G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. MJ15022 (NPN), MJ15024 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V CEO(sus) (I = 100 mAdc, I = 0) MJ15022 C B 200 MJ15024 250 Collector Cutoff Current I Adc CEX (V = 200 Vdc, V = 1.5 Vdc) MJ15022 CE BE(off) 250 (V = 250 Vdc, V = 1.5 Vdc) MJ15024 CE BE(off) 250 Collector Cutoff Current I Adc CEO (V = 150 Vdc, I = 0) MJ15022 CE B 500 (V = 200 vdc, I = 0) MJ15024 CE B 500 Emitter Cutoff Current I 500 Adc EBO (V = 5 Vdc, I = 0) CE B SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 0.5 s (nonrepetitive)) CE 5 (V = 80 Vdc, t = 0.5 s (nonrepetitive)) CE 2 ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 4 Vdc) C CE 15 60 (I = 16 Adc, V = 4 Vdc) C CE 5 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) C B 1.4 (I = 16 Adc, I = 3.2 Adc) C B 4.0 BaseEmitter On Voltage V 2.2 Vdc BE(on) (I = 8 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 100 There are two limitations on the powerhandling ability of 50 a transistor: average junction temperature and second T = 25C C breakdown. Safe operating area curves indicate I V C CE 20 limits of the transistor that must be observed for reliable 10 operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 5.0 The data of Figure 1 is based on T = 200 C T is J(pk) C BONDING WIRE LIMITED variable depending on conditions. At high case THERMAL LIMITATION 1.0 (SINGLE PULSE) temperatures, thermal limitations will reduce the power that SECOND BREAKDOWN can be handled to values Ion than the limitations imposed by LIMITED second breakdown. 0.2 0.1 0.1 0.2 0.5 10 20 50 100 250 500 1 k V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. ActiveRegion Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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