MJD340T4 ON Semiconductor

MJD340 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIXT4") 3 ELECTRICAL SIMILAR TO MJE340 AND MJE350 1 APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (SuffixT4") DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage INTERNAL SCHEMATIC DIAGRAM Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD340 PNP MJD350 V Collector-Base Voltage (IE = 0) 300 V CBO V Collector-Emitter Voltage (I = 0) 300 V CEO B V Emitter-Base Voltage (IC = 0) 3 V EBO I Collector Current 0.5 A C o I Collector Peak Current (tp = 25 C) 0.75 A CM o P Total Power Dissipation at T 25 C 15 W tot case o T Storage Temperature -65 to 150 C stg o T Max Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/5 September 2003 MJD340 / MJD350 THERMAL DATA o R Thermal Resistance Junction-case Max 8.33 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 300 V 0.1 mA CBO CB Current (v = 0) BE I Emitter Cut-off Current V = 3 V 0.1 mA EBO EB (I = 0) C V * Collector-Emitter I = 1 mA 300 V CEO(sus) C Sustaining Voltage (IB = 0) h * DC Current Gain I = 50 mA V = 10 V 30 240 FE C CE * Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curve 2/5