MJD47 / MJD50 NPN Epitaxial Silicon Transistor March 2014 MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features High-Voltage and High-Reliability D-PAK for Surface-Mount Applications Lead-Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK, - I Suffix) 1.Base 2.Collector 3.Emitter Electrically Similar to Popular TIP47 and TIP50 Ordering Information Part Number Top Mark Package Packing Method MJD47TF MJD47 TO-252 3L (DPAK) Tape and Reel MJD50TF MJD50 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit MJD47 350 V Collector-Base Voltage V CBO MJD50 500 MJD47 250 V Collector-Emitter Voltage V CEO MJD50 400 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 2 A CP I Base Current 0.6 A B T Junction Temperature 150 C J T Storage Temperature Range - 65 to 150 C STG 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MJD47 / MJD50 Rev. 1.1.0 1 MJD47 / MJD50 NPN Epitaxial Silicon Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 15.0 C P W C Collector Dissipation (T = 25C) 1.56 A Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Typ. Max. Unit MJD47 250 Collector-Emitter Sustaining V (sus) I = 30 mA, I = 0 V CEO (1) C B Voltage MJD50 400 MJD47 V = 150 V, I = 0 0.2 CE B I Collector Cut-Off Current mA CEO MJD50 V = 300 V, I = 0 0.2 CE B MJD47 V = 350 V, V = 0 0.1 CE EB I Collector Cut-Off Current mA CES MJD50 V = 500 V, V = 0 0.1 CE EB I Emitter Cut-Off Current V = 5 V, I = 0 1 mA EBO BE C V = 10 V, I = 0.3 A 30 150 CE C (1) h DC Current Gain FE V = 10 V, I = 1 A 10 CE C (1) V (sat) Collector-Emitter Saturation Voltage I = 1 A, I = 0.2 A 1 V CE C B (1) V (on) Base-Emitter On Voltage V = 10 V, I = 1 A 1.5 V BE CE C f Current Gain Bandwidth Product V = 10 V, I = 0.2 A 10 MHz T CE C Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MJD47 / MJD50 Rev. 1.1.0 2