MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features MJD5731 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 30 mAdc, I = 0) 350 C B Collector Cutoff Current I mAdc CEO (V = 250 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I mAdc CES (V = 350 Vdc, V = 0) 0.01 CE BE Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 0.5 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.3 Adc, V = 10 Vdc) C CE 30 175 (I = 1.0 Adc, V = 10 Vdc) C CE 10 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.2 Adc) 1.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 10 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 0.2 Adc, V = 10 Vdc, f = 2.0 MHz) 10 C CE SmallSignal Current Gain h fe (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz) 25 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 200 1.4 V = 10 V CE 1.2 100 T = 150C J 25C 1 50 T = 25C J 30 - 55C 0.8 20 0.6 10 - 55C 0.4 150C 5.0 0.2 V I /I = 5.0 CE(sat)) C B 3.0 2.0 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage