Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MJE200 MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : f =65MHz I =100mA (Min.) T C Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter- Base Voltage 8 V EBO I Collector Current 5 A C P Collector Dissipation (T =25C) 15 W C C T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 25 V CEO C B I Collector Cut-off Current V =40V, I =0 100 nA CBO CB E V =40V, I =0 T =125C 100 A CB E J I Emitter Cut-off Current V =8V, I =0 100 nA EBO BE C h DC Current Gain V =1V, I =500mA 70 FE CE C V =1V, I =2A 45 180 CE C V =2V, I =5A 10 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.3 V CE C B I =2A, I =200mA 0.75 V C C I =5A, I =1A 1.8 V C B V (sat) Base- Emitter Saturation Voltage I =5A, I =1A 2.5 V BE C B V (on) Base-Emitter ON Voltage V =1V, I =2A 1.6 V BE CE C f Current Gain Bandwidth Product V =10V, I =100mA 65 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1MHz 80 pF ob CB E 2001 Fairchild Semiconductor Corporation Rev. A2, June 2001