X-On Electronics has gained recognition as a prominent supplier of MJF6668 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJF6668 Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MJF6668 ON Semiconductor

MJF6668 electronic component of ON Semiconductor
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See Product Specifications
Part No.MJF6668
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 10A 100V Bipolar
Datasheet: MJF6668 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 1.859 ea
Line Total: USD 74.36 
Availability - 0
MOQ: 40  Multiples: 40
Pack Size: 40
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 40
Multiples : 40
40 : USD 1.859
100 : USD 1.603
250 : USD 1.4549
500 : USD 1.3336
1000 : USD 1.2932

   
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We are delighted to provide the MJF6668 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF6668 and other electronic components in the Darlington Transistors category and beyond.

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MJF6388 (NPN), MJF6668 (PNP) Complementary Power Darlingtons For Isolated Package Applications MJF6388 (NPN), MJF6668 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 5) V Vdc CEO(sus) (I = 30 mAdc, I = 0) 100 C B Collector Cutoff Current I Adc CEO (V = 80 Vdc, I = 0) 10 CE B Collector Cutoff Current I CEX (V = 100 Vdc, V = 1.5 Vdc) 10 Adc CE EB(off) (V = 100 Vdc, V = 1.5 Vdc, T = 125 C) 3.0 mAdc CE EB(off) C Collector Cutoff Current I Adc CBO (V = 100 Vdc, I = 0) 10 CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS (Note 5) DC Current Gain h FE (I = 3.0 Adc, V = 4.0 Vdc) 3000 15000 C CE (I = 5.0 Adc, V = 3.0 Vdc) 1000 C CE (I = 8.0 Adc, V = 4.0 Vdc) 200 C CE (I = 10 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 6.0 mAdc) 2.0 C B (I = 5.0 Adc, I = 0.01 Adc) 2.0 C B (I = 8.0 Adc, I = 80 mAdc) 2.5 C B (I = 10 Adc, I = 0.1 Adc) 3.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 5.0 Adc, I = 0.01 Adc) 2.8 C B (I = 10 Adc, I = 0.1 Adc) 4.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8.0 Adc, V = 4.0 Vdc) 2.5 C CE DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) 20 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E MJF6388 200 MJF6668 300 Insulation Capacitance C pF chs (CollectortoExternal Heatsink) 3.0 Typ SmallSignal Current Gain h fe (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 kHz) 1000 C CE 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. NPN PNP MJF6388 MJF6668 COLLECTOR COLLECTOR BASE BASE 8 k 120 8 k 120 EMITTER EMITTER Figure 1. Darlington Schematic

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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