MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJL21193 (PNP), MJL21194 (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 250 Vdc CEO(sus) (I = 100 mAdc, I = 0) C B Collector Cutoff Current I 100 Adc CEO (V = 200 Vdc, I = 0) CE B Emitter Cutoff Current I 100 Adc EBO (V = 5 Vdc, I = 0) CE C Collector Cutoff Current I 100 Adc CEX (V = 250 Vdc, V = 1.5 Vdc) CE BE(off) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4.0 CE (V = 80 Vdc, t = 1 s (nonrepetitive) 2.25 CE ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 5 Vdc) 25 75 C CE (I = 16 Adc, I = 5 Adc) 8 C B BaseEmitter On Voltage V 2.2 Vdc BE(on) (I = 8 Adc, V = 5 Vdc) C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.4 C B (I = 16 Adc, I = 3.2 Adc) 4 C B DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output T % HD V = 28.3 V, f = 1 kHz, P = 100 W h RMS LOAD RMS FE unmatched 0.8 (Matched pair h = 50 5 A/5 V) h FE FE matched 0.08 Current Gain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test PNP MJL21193 NPN MJL21194 6.5 8.0 V = 10 V CE 6.0 7.0 10 V 6.0 5.5 5 V 5.0 5.0 V = 5 V CE 4.0 4.5 3.0 4.0 2.0 T = 25C T = 25C J J 3.5 1.0 f = 1 MHz f = 1 MHz test test 3.0 0 0.1 1.0 10 0.1 1.0 10 I COLLECTOR CURRENT (AMPS) I COLLECTOR CURRENT (AMPS) C C Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product