X-On Electronics has gained recognition as a prominent supplier of MJL21194G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJL21194G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJL21194G ON Semiconductor

MJL21194G electronic component of ON Semiconductor
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Part No.MJL21194G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 16A 250V 200W NPN
Datasheet: MJL21194G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 6.8042 ea
Line Total: USD 20.41 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 11.6263
10 : USD 10.069
100 : USD 8.2504
500 : USD 7.0234
1000 : USD 5.9233
2000 : USD 5.6272

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 8
Multiples : 8
8 : USD 3.2072

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 275
Multiples : 275
275 : USD 3.5454

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 121
Multiples : 1
121 : USD 2.7118

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 7.4634
10 : USD 6.2846
25 : USD 6.0729
50 : USD 5.7386
100 : USD 5.4043
250 : USD 5.2594

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 7.4634
10 : USD 4.7548
25 : USD 4.6052
100 : USD 4.103
175 : USD 3.9855
525 : USD 3.5367

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 7.392
4 : USD 5.11
10 : USD 4.83
500 : USD 4.662
525 : USD 4.634

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3
Multiples : 1
3 : USD 6.8042
10 : USD 5.3807
25 : USD 4.2536
100 : USD 3.6062
175 : USD 3.2097
525 : USD 3.2032

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3
Multiples : 1
3 : USD 7.4437
10 : USD 5.8864
25 : USD 4.6533
100 : USD 3.9451
175 : USD 3.5113
525 : USD 3.5041

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJL21194G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJL21194G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJL21193 (PNP), MJL21194 (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 250 Vdc CEO(sus) (I = 100 mAdc, I = 0) C B Collector Cutoff Current I 100 Adc CEO (V = 200 Vdc, I = 0) CE B Emitter Cutoff Current I 100 Adc EBO (V = 5 Vdc, I = 0) CE C Collector Cutoff Current I 100 Adc CEX (V = 250 Vdc, V = 1.5 Vdc) CE BE(off) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4.0 CE (V = 80 Vdc, t = 1 s (nonrepetitive) 2.25 CE ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 5 Vdc) 25 75 C CE (I = 16 Adc, I = 5 Adc) 8 C B BaseEmitter On Voltage V 2.2 Vdc BE(on) (I = 8 Adc, V = 5 Vdc) C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.4 C B (I = 16 Adc, I = 3.2 Adc) 4 C B DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output T % HD V = 28.3 V, f = 1 kHz, P = 100 W h RMS LOAD RMS FE unmatched 0.8 (Matched pair h = 50 5 A/5 V) h FE FE matched 0.08 Current Gain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test PNP MJL21193 NPN MJL21194 6.5 8.0 V = 10 V CE 6.0 7.0 10 V 6.0 5.5 5 V 5.0 5.0 V = 5 V CE 4.0 4.5 3.0 4.0 2.0 T = 25C T = 25C J J 3.5 1.0 f = 1 MHz f = 1 MHz test test 3.0 0 0.1 1.0 10 0.1 1.0 10 I COLLECTOR CURRENT (AMPS) I COLLECTOR CURRENT (AMPS) C C Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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