X-On Electronics has gained recognition as a prominent supplier of MJL1302AG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJL1302AG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJL1302AG ON Semiconductor

MJL1302AG electronic component of ON Semiconductor
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See Product Specifications
Part No.MJL1302AG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 15A 230V 200W PNP
Datasheet: MJL1302AG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.8 ea
Line Total: USD 70 
Availability - 970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 2.8
100 : USD 2.725
250 : USD 2.65
500 : USD 2.5125
1000 : USD 2.475
2500 : USD 2.4375
5000 : USD 2.4
7500 : USD 2.3625

18
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 5.6857
10 : USD 4.9572
25 : USD 4.5252
100 : USD 4.0874
500 : USD 3.8848
1000 : USD 3.7931

80
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.558
5 : USD 4.032
12 : USD 3.808
100 : USD 3.668

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 3.4259
100 : USD 3.3341
250 : USD 3.2424
500 : USD 3.0741
1000 : USD 3.0282

679
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 3.6907
100 : USD 3.0914
275 : USD 2.6728

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJL1302AG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJL1302AG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJL3281A (NPN) MJL1302A (PNP) Complementary Bipolar Power Transistors Features MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 260 C B Collector Cutoff Current I Adc CBO (V = 260 Vdc, I = 0) 50 CB E Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) 5 EB C SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4 CE (V = 100 Vdc, t = 1 s (nonrepetitive) 1 CE ON CHARACTERISTICS DC Current Gain h FE (I = 500 mAdc, V = 5 Vdc) 75 150 C CE (I = 1 Adc, V = 5 Vdc) 75 150 C CE (I = 3 Adc, V = 5 Vdc) 75 150 C CE (I = 5 Adc, V = 5 Vdc) 75 150 C CE (I = 8 Adc, V = 5 Vdc) 45 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 1 Adc) 3 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1 Adc, V = 5 Vdc, f = 1 MHz) 30 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 600 CB E test

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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