MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJW21195 (PNP) MJW21196 (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mAdc, I = 0) V 250 Vdc C B CEO(sus) Collector Cutoff Current (V = 200 Vdc, I = 0) I 100 Adc CE B CEO Emitter Cutoff Current (V = 5 Vdc, I = 0) I 50 Adc CE C EBO Collector Cutoff Current (V = 250 Vdc, V = 1.5 Vdc) I 50 Adc CE BE(off) CEX SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4.0 CE (V = 80 Vdc, t = 1 s (nonrepetitive) 2.25 CE ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 5 Vdc) 20 80 C CE (I = 16 Adc, I = 5 Adc) 8 C B BaseEmitter On Voltage (I = 8 Adc, V = 5 Vdc) V 2.0 Vdc C CE BE(on) CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.0 C B (I = 16 Adc, I = 3.2 Adc) 3 C B DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output T % HD V = 28.3 V, f = 1 kHz, P = 100 W h RMS LOAD RMS FE unmatched 0.8 (Matched pair h = 50 5 A/5 V) h FE FE matched 0.08 Current Gain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test