MMBD301M3T5G ON Semiconductor

MMBD301M3 Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spinoff of our popular SOT 23 three leaded device. It is designed primarily for highefficiency UHF and VHF detector applications. It is readily www.onsemi.com adaptable to many other fast switching RF and digital applications and is housed in the SOT723 surface mount package. This device is 30 VOLTS ideal for lowpower surface mount applications where board space is SILICON HOTCARRIER at a premium. DETECTOR AND SWITCHING Features DIODES Extremely Low Minority Carrier Lifetime 15 ps (Typ) Very Low Capacitance 1.5 pF (Max) V = 15 V R Reduces Board Space 3 1 CATHODE ANODE These Devices are PbFree and Halogen Free/BFR Free MARKING MAXIMUM RATINGS DIAGRAM Rating Symbol Value Unit SOT723 CASE 631AA AK M Reverse Voltage V 30 V R STYLE 2 Forward Current (DC) I 200 (Max) mA F Total Device Dissipation P F AK = Specific Device Code T = 25C A 200 mW M = Date Code Derate above 25C 2.0 mW/C Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. MMBD301M3T5G SOT723 8000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 10 A) V 30 V R (BR)R Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1 C 0.9 1.5 pF R T Reverse Leakage (V = 25 V) Figure 3 I 13 200 nAdc R R Forward Voltage (I = 1.0 mAdc) Figure 4 V 0.38 0.45 Vdc F F Forward Voltage (I = 10 mAdc) Figure 4 V 0.52 0.6 Vdc F F Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2018 Rev. 2 MMBD301M3/DMMBD301M3 TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 f = 1.0 MHz 2.4 400 2.0 KRAKAUER METHOD 300 1.6 1.2 200 0.8 100 0.4 0 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 010 20 30 40 50 60 70 80 90 100 V , REVERSE VOLTAGE (VOLTS) I , FORWARD CURRENT (mA) R F Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 100 T = 100C A 1.0 10 T = - 40C T = 85C A A 75C 0.1 1.0 25C T = 25C A 0.01 0.001 0.1 0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 V , REVERSE VOLTAGE (VOLTS) V , FORWARD VOLTAGE (VOLTS) R F Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) CAPACITIVE CONDUCTION I R(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL PADS NETWORK OSCILLOSCOPE GENERATOR (PADS) (50 INPUT) DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 2 I , REVERSE LEAKAGE ( A) C , TOTAL CAPACITANCE (pF) R T , MINORITY CARRIER LIFETIME (ps) I , FORWARD CURRENT (mA) F