X-On Electronics has gained recognition as a prominent supplier of MMBD353LT1G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. MMBD353LT1G Small Signal Switching Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

MMBD353LT1G ON Semiconductor

MMBD353LT1G electronic component of ON Semiconductor
MMBD353LT1G ON Semiconductor
MMBD353LT1G Small Signal Switching Diodes
MMBD353LT1G  Semiconductors

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See Product Specifications
Part No. MMBD353LT1G
Manufacturer: ON Semiconductor
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 7V 225mW Dual
Datasheet: MMBD353LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0503 ea
Line Total: USD 150.9 
Availability - 5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0503

17460
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 139
Multiples : 1
139 : USD 0.4692
250 : USD 0.4681
500 : USD 0.4672
1000 : USD 0.4482
3000 : USD 0.4473
6000 : USD 0.4464
15000 : USD 0.4454

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Package / Case
Brand
Reverse Voltage
Forward Voltage Drop
Reverse Current Ir
Factory Pack Quantity :
Height
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Mxhts
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Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBD353LT1G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBD353LT1G and other electronic components in the Small Signal Switching Diodes category and beyond.

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G www.onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications SOT23 (TO236) but are suitable also for use in detector and ultrafast switching CASE 318 circuits. 1 2 Features ANODE CATHODE 3 Very Low Capacitance Less Than 1.0 pF Zero V CATHODE/ANODE Low Forward Voltage 0.5 V (Typ) I = 10 mA MMBD352LT1G F STYLE 11 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 2 CATHODE ANODE Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CATHODE/ANODE Compliant MMBD353LT1G NSVMMBD353LT1G STYLE 19 MAXIMUM RATINGS (EACH DIODE) 1 ANODE Rating Symbol Value Unit 3 2 ANODE Continuous Reverse Voltage V 7.0 V CATHODE R CC MMBD354LT1G Stresses exceeding those listed in the Maximum Ratings table may damage the NSVMMBD354LT1G device. If any of these limits are exceeded, device functionality should not be STYLE 9 assumed, damage may occur and reliability may be affected. 1 CATHODE THERMAL CHARACTERISTICS ANODE 3 2 CATHODE Characteristic Symbol Max Unit MMBD355LT1G Total Device Dissipation FR5 Board, P D STYLE 12 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Mxx M Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, JunctiontoAmbient 417 C/W R JA Mxx = Device Code Junction and Storage Temperature T , T 55 to +150 C M = Date Code* J stg = PbFree Package 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 9 MMBD352LT1/DMMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Rating Symbol Min Max Unit Forward Voltage V V F (I = 10 mAdc) 0.60 F Reverse Leakage Current (Note 3) I A R (V = 3.0 V) 0.25 R (V = 7.0 V) 10 R Capacitance C pF (V = 0 V, f = 1.0 MHz) 1.0 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. ORDERING INFORMATION Device Marking Package Shipping MMBD352LT1G SOT23 3,000 Units / Tape & Reel M5G (PbFree) MMBD352LT3G SOT23 10,000 Units / Tape & Reel M5G (PbFree) MMBD353LT1G SOT23 3,000 Units / Tape & Reel M4F (PbFree) NSVMMBD353LT1G SOT23 3,000 Units / Tape & Reel M4F (PbFree) MMBD353LT3G SOT23 10,000 Units / Tape & Reel M4F (PbFree) MMBD354LT1G SOT23 3,000 Units / Tape & Reel M6H (PbFree) NSVMMBD354LT1G SOT23 3,000 Units / Tape & Reel M6H (PbFree) MMBD355LT1G SOT23 3,000 Units / Tape & Reel MJ1 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1.0 100 T = 85C A 0.9 10 T = -40C A 0.8 1.0 T = 25C A 0.7 0.1 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 4.0 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C, CAPACITANCE (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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