MMBD4148CC ON Semiconductor

DATA SHEET www.onsemi.com Small Signal Diode CONNECTION DIAGRAM 3 MMBD4148SE, MMBD4148CC, MMBD4148CA 12 Features These are PbFree Devices 3 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) A 2 Rating Symbol Value Unit Maximum Repetitive Reverse Voltage V 100 V RRM SOT23 (TO236) Average Rectified Forward Current I 200 mA F(AV) CASE 31808 NonRepetitive Peak Forward I A FSM Surge Current Pulse Width = 1.0 s 1.0 MARKING DIAGRAM Pulse Width = 1.0 s 2.0 Operating Junction Temperature Range T 150 C J DxM Storage Temperature Range T 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Dx = Device Code x = 4, 5, 6 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A M = Assembly Operation Month Characteristic Symbol Value Unit = PbFree Package Power Dissipation P 350 mW (Note: Microdot may be in either location) D Thermal Resistance, JunctiontoAmbient R 357 C/W JA ORDERING INFORMATION See detailed ordering and shipping information on page 4 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A of this data sheet. Characteristic Symbol Min Typ Max Unit Breakdown Voltage V V R I = 5.0 A 75 R I = 100 A 100 R Forward Voltage V V F I = 10 mA 1.0 F Reverse Leakage Current I R V = 20 V 25 nA R V = 20 V, T = 150C 50 A R A V = 75 V 5.0 A R Total Capacitance C pF T V = 0 V, f = 1.0 MHz 4.0 R Reverse Recovery Time t ns rr I = 10 mA, V = 6.0 V, 4.0 F R I = 1.0 mA, R = 100 RR L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC,2004 1 Publication Order Number: January, 2022 Rev. 2 MMBD4148SE/DMMBD4148SE, MMBD4148CC, MMBD4148CA TYPICAL PERFORMANCE CHARACTERISTICS 150 Ta = 25C Ta = 25C 300 250 140 200 130 150 100 120 50 110 0 10 20 30 70 100 1 2 3 5 10 20 30 50 100 50 I , REVERSE CURRENT ( A) R V , REVERSE VOLTAGE (V) R Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage BV 1.0 to 100 A IR 10 to 100 V Ta = 25C Ta = 25C 700 450 650 400 600 350 550 300 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 I , REVERSE CURRENT ( A) I , FORWARD CURRENT (mA) F F Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current VF 1.0 to 100 A VF 0.1 to 10 mA 1.3 Ta = 25C Ta = 25C 1.4 1.2 1.2 1.0 1.1 0.8 0.6 1.0 68 12 14 100 200 300 500 02 4 10 10 20 30 50 I , FORWARD CURRENT (mA) REVERSE VOLTAGE (V) F Figure 5. Forward Voltage vs. Forward Current Figure 6. Total Capacitance vs. Reverse Voltage VF 10 to 800 mA www.onsemi.com 2 V , FORWARD VOLTAGE (V) V , FORWARD VOLTAGE (mV) V , REVERSE VOLTAGE (V) R F F I , REVERSE CURRENT (nA) R V , FORWARD VOLTAGE (mV) TOTAL CAPACITANCE (pF) F