MMBD4448WT-TP Micro Commercial Components (MCC)

MMBD4448WT Features High Conductance Fast Switching Speed Surface Mount For General Purpose Switching Applications Surface Mount Package Ideally Suited for Automatic Insertion Switching Diode Halogen Free. Green Device (Note 1) 200mW Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-323 Thermal Resistance(Note 2):625C/W Junction to Ambient A Repetitive RMS D DC Blocking Peak Reverse Reverse MCC Device Voltage Voltage Voltage Part Number Marking C B V R V V RRM R(RMS) MMBD4448WT KA3 75V 53V 75V F E Non-Repetitive H J G Peak Reverse V 100V RM K Voltage L Working Peak DIMENSIONS V 75V RWM INCHES MM Reverse Voltage DIM NOTE MIN MAX MIN MAX Forward A 0.071 0.087 1.80 2.20 Continuous I 500mA Note2 FM 0.045 0.053 1.15 1.35 B Current C 0.083 0.096 2.10 2.45 Average D 0.026 0.65 TYP. I Rectified Output 250mA o E 0.047 0.055 1.20 1.40 Current F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 4.0A t=1us Non-Repetitive H 0.035 0.044 0.90 1.10 Peak Forward I 8.3ms 2.0A FSM J 0.002 0.010 0.05 0.25 Surge Current 1.0s 1.0A K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 Power P 200mW Note2 D Dissipation 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.90 2.Valid Provided That Terminals are Kept at Ambient Temperature 1.90 Internal Structure 0.65 0.65 Rev.3-4- 05202021 1/4 MCCSEMI.COMMMBD4448WT Electrical Characteristics 25C Unless Otherwise Specified 0.62V(Min.) I =5.0mA F I =5.0mA 0.720V(Max.) F Forward Voltage Drop V FM I =10.0mA 0.855V(Max.) F 1.000V(Max.) I =100.0mA F 1.250V(Max.) I =150.0mA F 2.5A V =75V R 50A V =75VT =150 R j I Maximum Peak Reverse voltage RM 30A V =25VT =150 R j 25nA V =20V R C V =0.0V,f=1.0MHz Maximum Junction Capacitance 4.0pF J R I =10mA, I =10mA F R Maximum Reverse Recovery Time t 4.0ns rr I =0.1*IRR =100 rr L Rev.3-4-05202021 2/4 MCCSEMI.COM