MMBT2222A Features Ideally Suited For Automatic Instertion Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 357/W Junction to Ambient SOT-23 Parameter Symbol Rating Unit Collector-Base Voltage V 75 V A CBO D V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO B C Collector Current I 0.6 A C (2) Collector Current-Peak I 1.1 A CM F E Collector Power Dissipation P 350 mW C Note: G H J 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K 2. pulse width40us. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Marking: 1P A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 Internal Structure D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 C G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 B E L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-04292021 1/4 MCCSEMI.COMMMBT2222A Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions * V I =10A, I =0 Collector-Base Breakdown Voltage 75 V (BR)CBO C E V I =10mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C I V =60V,V =3V 10 nA Collector Cutoff Current CEX CE BE h V =10V, I =0.1mA 35 FE1 CE C h V =10V, I =1mA 50 FE2 CE C h 75 V =10V, I =10mA FE3 CE C DC Current Gain* h 100 300 V =10V, I =150mA FE4 CE C h V =1V, I =150mA 50 FE5 CE C h V =10V, I =500mA 40 FE6 CE C 0.3 V I =150mA, I =15mA C B V Collector-Emitter Saturation Voltage CE(sat) 1.0 V I =500mA, I =50mA C B I =150mA, I =15mA 0.6 1.2 V C B Base-Emitter Saturation Voltage V BE(sat) I =500mA, I =50mA 2.0 V C B Transition Frequency f 300 MHz V =20V, I =20mA, f=100MHz T CE C Output Capacitance C 8 pF V =10V, I =0, f=1MHz, obo CB E C V =0.5V, I =0, f=1MHz, Input Capacitance 25 pF ibo BE C V =10V, I =100uA, f=1kHz, R =1k Noise Figure NF 4 dB CE C S t Delay Time 10 ns V =30V, V =0.5V d CC BE I =150mA, I =15mA Rise Time t 25 ns C B1 r t Storage Time 225 ns V =30V, I =150mA s CC C t I =I =15mA Fall Time 60 ns f B1 B2 *Pluse Width 300s, Duty Cycle 2.0% Rev.3-4-04292021 2/4 MCCSEMI.COM