MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT416/SC75 package which is designed for low power surface mount applications. GENERAL PURPOSE AMPLIFIER TRANSISTORS Features NSVM Prefix for Automotive and Other Applications Requiring SURFACE MOUNT Unique Site and Control Change Requirements COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit 2 EMITTER CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 40 Vdc 3 CBO CASE 463 EmitterBase Voltage V 5.0 Vdc EBO SOT416/SC75 2 STYLE 1 Collector Current Continuous I 200 mAdc C 1 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation, P D FR4 Board (Note 1) T = 25C 200 mW A 2A M Derated above 25C 1.6 mW/C Thermal Resistance, JunctiontoAmbient R 600 C/W JA 1 (Note 1) 2A = Device Code Total Device Dissipation, P D FR4 Board (Note 2) T = 25C 300 mW M = Date Code* A Derated above 25C 2.4 mW/C = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 400 C/W JA (Note 2) *Date Code orientation may vary depending up- on manufacturing location. Junction and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR4 Minimum Pad Device Package Shipping 2. FR4 1.0 1.0 Inch Pad MMBT3906TT1G SOT416 3000 / Tape & (PbFree) Reel NSVMMBT3906TT1G SOT416 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2017 Rev. 3 MMBT3906TT1/DMMBT3906TT1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance1 C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10.0 EB C Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 2.0 12 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.1 10 CE C SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 3.0 60 CE C Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 4.0 CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 225 CC C s ns Fall Time (I = I = 1.0 mAdc) t 75 B1 B2 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2