MMT05B230T3, MMT05B260T3, MMT05B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT05B230T3, MMT05B260T3, MMT05B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T 40 to +125 C J1 Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 50 A, 10x1000 sec 25C) P 2000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to J forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) V V (BO) (dv/dt = 100 V/ s, I = 1.0 A, Vdc = 1000 V) MMT05B230T3 265 SC MMT05B260T3 320 MMT05B310T3 365 (+65C) 280 MMT05B230T3 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage (Both polarities) V V (BO) (f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms), MMT05B230T3 265 SC OC 320 R = 1.0 k , t = 0.5 cycle) (Note 3) MMT05B260T3 I MMT05B310T3 365 (+65C) MMT05B230T3 280 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage Temperature Coefficient dV /dT 0.08 %/C (BO) J Breakdown Voltage (I = 1.0 mA) Both polarities V V (BR) (BR) MMT05B230T3 190 MMT05B260T3 240 MMT05B310T3 280 Off State Current (V = 50 V) Both polarities I 2.0 A D1 D1 I 5.0 D2 Off State Current (V = V ) Both polarities D2 DM OnState Voltage (I = 1.0 A) V 1.53 3.0 V T T (PW 300 s, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, V = 1000 V(rms), R = 1.0 k ) Both polarities I 230 mA DM S BO Holding Current (Both polarities) (Note 3) I 150 340 mA H V = 500 V I (Initiating Current) = 1.0 A S T Critical Rate of Rise of OffState Voltage dv/dt 2000 V/ s (Linear waveform, V = Rated V , T = 25C) D BR J Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) C 22 pF O 53 75 Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating.