X-On Electronics has gained recognition as a prominent supplier of MMT05B310T3G Thyristor Surge Protection Devices - TSPD across the USA, India, Europe, Australia, and various other global locations. MMT05B310T3G Thyristor Surge Protection Devices - TSPD are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Thyristor Surge Protection Devices - TSPD, ensuring timely deliveries around the world.

MMT05B310T3G ON Semiconductor

MMT05B310T3G electronic component of ON Semiconductor
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Part No.MMT05B310T3G
Manufacturer: ON Semiconductor
Category: Thyristor Surge Protection Devices - TSPD
Description: Thyristor Surge Protection Devices - TSPD 50A Surge 365V
Datasheet: MMT05B310T3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2004: USD 0.2166 ea
Line Total: USD 434.07 
Availability - 0
MOQ: 2004  Multiples: 2004
Pack Size: 2004
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.144

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2004
Multiples : 2004
2004 : USD 0.2166

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.144

   
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We are delighted to provide the MMT05B310T3G from our Thyristor Surge Protection Devices - TSPD category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMT05B310T3G and other electronic components in the Thyristor Surge Protection Devices - TSPD category and beyond.

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MMT05B230T3, MMT05B260T3, MMT05B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT05B230T3, MMT05B260T3, MMT05B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T 40 to +125 C J1 Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 50 A, 10x1000 sec 25C) P 2000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to J forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) V V (BO) (dv/dt = 100 V/ s, I = 1.0 A, Vdc = 1000 V) MMT05B230T3 265 SC MMT05B260T3 320 MMT05B310T3 365 (+65C) 280 MMT05B230T3 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage (Both polarities) V V (BO) (f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms), MMT05B230T3 265 SC OC 320 R = 1.0 k , t = 0.5 cycle) (Note 3) MMT05B260T3 I MMT05B310T3 365 (+65C) MMT05B230T3 280 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage Temperature Coefficient dV /dT 0.08 %/C (BO) J Breakdown Voltage (I = 1.0 mA) Both polarities V V (BR) (BR) MMT05B230T3 190 MMT05B260T3 240 MMT05B310T3 280 Off State Current (V = 50 V) Both polarities I 2.0 A D1 D1 I 5.0 D2 Off State Current (V = V ) Both polarities D2 DM OnState Voltage (I = 1.0 A) V 1.53 3.0 V T T (PW 300 s, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, V = 1000 V(rms), R = 1.0 k ) Both polarities I 230 mA DM S BO Holding Current (Both polarities) (Note 3) I 150 340 mA H V = 500 V I (Initiating Current) = 1.0 A S T Critical Rate of Rise of OffState Voltage dv/dt 2000 V/ s (Linear waveform, V = Rated V , T = 25C) D BR J Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) C 22 pF O 53 75 Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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