MPS4124
Amplifier Transistor
NPN Silicon
Features
PbFree Packages are Available* MPS4124
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V Vdc
(BR)CEO
(I = 1.0 mA, I = 0) 25
C B
CollectorBase Breakdown Voltage V Vdc
(BR)CBO
(I = 10 A, I = 0) 30
C E
EmitterBase Breakdown Voltage V Vdc
(BR)EBO
5.0
(I = 0, I = 10 A)
C E
Collector Cutoff Current I nAdc
CBO
(V = 20 V, I = 0) 50
CB E
Emitter Cutoff Current I nAdc
EBO
(V = 3.0 V, I = 0) 50
EB C
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 2.0 mA, V = 1.0 V) 120 360
C CE
(I = 50 mA, V = 1.0 V) 60
C CE
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 50 mA, I = 5.0 mA) 0.3
C B
BaseEmitter Saturation Voltage V Vdc
BE(sat)
(I = 50 mA, I = 5.0 mA) 0.95
C B
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product f MHz
T
(I = 10 mA, V = 20 V, f = 100 MHz) 170
C CE
Output Capacitance C pF
ob
(V = 5.0 V, I = 0, f = 1.0 MHz) 4.0
CB E
Input Capacitance C pF
ib
(V = 0.5 V, I = 0, f = 1.0 MHz) 13.5
EB C
SmallSignal Current Gain h
fe
(I = 2.0 mA, V = 1.0 V, f = 1.0 kHz) 120 480
C CE
Noise Figure NF dB
(I = 100 A, V = 5.0 V, R = 1.0 k, f = 1.0 kHz) 5.0
C CE S