MPS4250 Transistor PNP Silicon Features This is a PbFree Device* MPS4250 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 40 Vdc (BR)CES (I = 5.0 mA) C Collector Emitter Sustaining Voltage (Note 1) V 40 Vdc (BR)CEO(sus) (I = 5.0) C Collector Base Breakdown Voltage V 40 Vdc (BR)CBO (I = 10 A) C Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A) E Collector Cutoff Current I CBO (V = 50 V) 10 nA CB (V = 40 V, T = 65C) 3.0 A CB A Emitter Cutoff Current I 20 nA EBO (V = 3.0 V) EB ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mA, V = 5.0 V) 250 C CE (I = 10 mA, V = 5.0 V) 250 C CE Collector Emitter Saturation Voltage (Note 1) V 0.25 Vdc CE(sat) (I = 10 mA, I = 0.5 mA) C B Base Emitter Saturation Voltage (Note 1) V 0.9 Vdc BE(sat) (I = 10 mA, I = 0.5 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 6.0 pF obo (V = 5.0 V, f = 1.0 MHz) CB Input Capacitance C 16 pF ibo (V = 0.5 V, f = 1.0 MHz) EB SmallSignal Current Gain h fe (I = 1.0 mA, V = 5.0 V, f = 1.0 kHz) 250 800 C CE (I = 0.5 mA, V = 5.0 V, f = 20 MHz) 2.0 C CE Noise Figure NF dB (I = 20 A, V = 5.0 V, R = 10 k , f = 1.0 kHz, P = 150 Hz) 2.0 C CE S BW (I = 250 A, V = 5.0 V, R = 1.0 k , f = 1.0 kHz, P = 150 Hz) 2.0 C CE S BW 1. Pulse Test: Pulse Width = 300 s Duty Cycle = 2.0%.