MPS5172 General Purpose Transistor NPN Silicon Features PbFree Packages are Available* MPS5172 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V 25 Vdc (BR)CEO (I = 10 mA, I = 0) C B Collector Cutoff Current I 100 nAdc CES (V = 25 V, I = 0) CE B Collector Cutoff Current I CBO (V = 25 V, I = 0) 100 nAdc CB E (V = 25 V, I = 0, T = 100C) 10 Adc CB E A Emitter Cutoff Current I 100 nAdc EBO (V = 5.0 V, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h 100 500 FE (V = 10 V, I = 10 mA) CE C CollectorEmitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B BaseEmitter On Voltage V 0.5 1.25 Vdc BE(on) (I = 10 mAdc, V = 10 V) C CE SMALLSIGNAL CHARACTERISTICS CollectorBase Capacitance C 1.6 10 pF cb (V = 10 V, f = 1.0 MHz) CB SmallSignal Current Gain h 100 750 fe (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.