MPS6518 Discrete POWER & Signal Technologies MPS6518 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VEBO Emitter-Base Voltage 4.0 V I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPS6518 PD Total Device Dissipation 625 mW Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA 1997 Fairchild Semiconductor CorporationMPS6518 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 0.5 mA, I = 0 40 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 10 A, I = 0 4.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 0.5 CBO CB E A V = 30 V, I = 0, T = 60C 1.0 A CB E A ON CHARACTERISTICS* h DC Current Gain V = 10 V, I = 2.0 mA 150 300 FE CE C V = 10 V, I = 100 mA 90 CE C Collector-Emitter Saturation Voltage I = 50 mA, I = 5.0 mA 0.5 V VCE( ) C B sat SMALL SIGNAL CHARACTERISTICS Output Capacitance V = 10 V, f = 100 kHz 4.0 pF C CB ob *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%