NPN MPS6601 PNP MPS6651, MPS6652 MPS6652 is a Preferred Device Amplifier Transistors Features Voltage and Current are Negative for PNP Transistors NPN MPS6601 PNP MPS6651, MPS6652 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MPS6601/6651 25 C B MPS6652 40 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MPS6601/6651 25 C E MPS6652 40 EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I Adc CES (V = 25 Vdc, I = 0) MPS6601/6651 0.1 CE B (V = 30 Vdc, I = 0) MPS6652 0.1 CE B Collector Cutoff Current I Adc CBO (V = 25 Vdc, I = 0) MPS6601/6651 0.1 CB E (V = 30 Vdc, I = 0) MPS6652 0.1 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 1.0 Vdc) 50 C CE (I = 500 mAdc, V = 1.0 Vdc) 50 C CE (I = 1000 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1000 mAdc, I = 100 mAdc) 0.6 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 50 mAdc, V = 10 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 30 CB E SWITCHING CHARACTERISTICS Delay Time t 25 ns d (V = 40 Vdc, I = 500 mAdc, Rise Time CC C t 30 ns r I = 50 mAdc, B1 Storage Time t 250 ns t 300 ns Duty Cycle) s p Fall Time t 50 ns f ORDERING INFORMATION Device Package Shipping MPS6601RLRAG TO92 (TO226) 2000 Units / Tape & Reel (PbFree) MPS6651G TO92 (TO226) (PbFree) MPS6652 TO92 (TO226) 5000 Units / Bulk MPS6652G TO92 (TO226) (PbFree) MPS6652RLRAG TO92 (TO226) 2000 Units / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.