MPS6717 One Watt Amplifier Transistor NPN Silicon MPS6717 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V 80 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 80 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CBO (V = 60 Vdc, I = 0) CB E Emitter Cutoff Current I 10 Adc EBO (V = 5.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 50 mAdc, V = 1.0 Vdc) 80 C CE (I = 250 mAdc, V = 1.0 Vdc) 50 250 C CE CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 250 mAdc, I = 10 mAdc) C B BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 250 mAdc, V = 1.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CollectorBase Capacitance C 30 pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E SmallSignal Current Gain h 2.5 25 fe (I = 200 mAdc, V = 5.0 Vdc, f = 20 MHz) C CE 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 400 T = 125C J V = 1.0 V CE 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain