NPN MPS8099 PNP MPS8599 Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors NPN MPS8099 PNP MPS8599 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 80 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 5.0 (I = 10 Adc, I = 0) E C Collector Cutoff Current I Adc CES (V = 60 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I Adc CBO (V = 80 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 4.0 Vdc, I = 0) 0.1 EB C ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 100 300 C CE (I = 10 mAdc, V = 5.0 Vdc) 100 C CE (I = 100 mAdc, V = 5.0 Vdc) 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 5.0 mAdc) 0.4 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 10 mAdc, V = 5.0 Vdc) 0.6 0.8 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 150 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 30 EB C 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.