MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplier February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplier Description This device is designed for general purpose amplier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* T = 25C unless otherwise specied. A Parameter Symbol Value Unit Collector-Emitter Voltage V -80 V CES Collector-Base Voltage V -80 V CBO Emitter-Base Voltage V -4.0 V EBO Collector Current Continuous I -500 mA C Operating and Storage Junction Temperature Range T , T -55 to +150 C J STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25C unless otherwise noted. A Max Characteristic Symbol MPSA56 *MMBTA56 **PZTA56 Units Total Device Dissipation, P 625 350 1,000 mW D Derate above 25C 5.0 2.8 8.0 mW/C Thermal Resistance, Junction to Case R 83.3 C/W JC Thermal Resistance, Junction to Ambient R 200 357 125 C/W JA *Device mounted on FR-4 PCB 1.6 x 1.6 x 0.06 2 **Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm mounting pad for the collector lead min. 6 cm . Packages MPSA56 MMBTA56 PZTA56 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 2G 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MPSA56/MMBTA56/PZTA56 Rev. 1.0.2MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplier Electrical Characteristics T = 25C unless otherwise specied. A Parameter Symbol Test Condition Min. Max. Units OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* V I = -1.0mA, I = 0 -80 V (BR)CEO C B Collector-Base Breakdown Voltage V I = -100A, I = 0 -80 V (BR)CBO C E Emitter-Base Breakdown Voltage V I = -100A, I = 0 -4.0 V (BR)EBO E C Collector-Cutoff Current I V = -60V, I = 0 -0.1 A CEO CE B Collector-Cutoff Current I V = -80V, I = 0 -0.1 A CBO CB E ON CHARACTERISTICS DC Current Gain h I = -10mA, V = -1.0V 100 FE C CE I = -100mA, V = -1.0V 100 C CE Collector-Emitter Saturation Voltage V I = -100mA, I = -10mA -0.2 V CE(sat) C B Base-Emitter On Voltage V I = -100mA, V = -1.0V -1.2 V BE(on) C CE SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f I = -100mA, V = -1.0V, 50 MHz T C CE f = 100MHz *Pulse Test: Pulse Width 300s, Duty Cycle 2.0% Note: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10) 2 www.fairchildsemi.com MPSA56/MMBTA56/PZTA56 Rev. 1.0.2