MMBTA56 / PZTA56 PNP General-Purpose Amplifier February 2015 MMBTA56 / PZTA56 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. C C E E C B SOT-223 SOT-23 B Mark: 2G Figure 1. MMBTA56 Device Package Figure 2. PZTA56 Device Package Ordering Information Part Number Marking Package Packing Method MMBTA56 2G SOT-23 3L Tape and Reel PZTA56 A56 SOT-223 4L Tape and Reel (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -80 V CES V Collector-Base Voltage -80 V CBO V Emitter-Base Voltage -4.0 V EBO I Collector Current - Continuous -500 mA C T T Operating and Storage Junction Temperature Range -55 to +150 C J , STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBTA56 / PZTA56 Rev. 1.4MMBTA56 / PZTA56 PNP General-Purpose Amplifier Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. Symbol Parameter Unit (3) (4) MMBTA56 PZTA56 Total Device Dissipation 350 1000 mW P D Derate Above 25C 2.8 8.0 mW/C R Thermal Resistance, Junction-to-Ambient 357 125 C/W JA Notes: 2 3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm mounting pad for the collector lead minimum 6cm . 4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit Collector-Emitter Breakdown V I = -1.0 mA, I = 0 -80 V (5) (BR)CEO C B Voltage V Collector-Base Breakdown Voltage I = -100 A, I = 0 -60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = -100 A, I = 0 -4.0 V (BR)EBO E C I Collector Cut-Off Current V = -60 V, I = 0 -0.1 A CEO CE B I Collector Cut-Off Current V = -80 V, I = 0 -0.1 A CBO CB E I = -10 mA, V = -1.0 V 100 C CE h DC Current Gain FE I = -100 mA, V = -1.0 V 100 C CE Collector-Emitter Saturation V (sat) I = -100 mA, I = -10 mA -0.25 V CE C B Voltage V (on) Base-Emitter On Voltage I = -100 mA, V = -1.0 V -1.2 V BE C CE I = -100 mA, V = -1.0 V, C CE f Current Gain - Bandwidth Product 50 MHz T f = 100 MHz Note: 5. Pulse test: pulse width 300 s, duty cycle 2.0%. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBTA56 / PZTA56 Rev. 1.4 2