Switch-mode Schottky Power Rectifier Surface Mount Power Package MBRD5H100, NBRD5H100 This series of Power Rectifiers employs the Schottky Barrier principle in a large metaltosilicon power diode. Stateoftheart www.onsemi.com geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high SCHOTTKY BARRIER frequency switching power supplies, free wheeling diodes, and RECTIFIER polarity protection diodes. 5 AMPERES, 100 VOLTS Features Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL 94 V0 0.125 in DPAK Short Heat Sink Tab Manufactured Not Sheared CASE 369C NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable 4 3 These Devices are PbFree and are RoHS Compliant* (Pin 1: No Connect) Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 94 V0 Weight: 0.4 grams (approximately) MARKING DIAGRAM Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable AYWW B Lead and Mounting Surface Temperature for Soldering Purposes: 5100G 260C Max. for 10 Seconds Device Meets MSL1 Requirements A = Assembly Location ESD Ratings: Y = Year Machine Model = C (> 400 V) WW = Work Week Human Body Model = 3B (> 8000 V) B5100 = Device Code G = PbFree Package ORDERING INFORMATION Device Package Shipping MBRD5H100T4G DPAK 2,500 / (PbFree) Tape & Reel NBRD5H100T4G DPAK 2,500 / (PbFree) Tape & Reel NBRD5H100T4GVF01 DPAK 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 9 MBRD5H100/DMBRD5H100, NBRD5H100 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 171C 5 C Peak Repetitive Forward Current I A FRM (Square Wave, Duty = 0.5) T = 171C 10 C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 105 Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase (Note 2) 1.6 R JC JunctiontoAmbient (Note 2) 95.8 R JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 5 A, T = 25C) 0.71 F J (I = 5 A, T = 125C) 0.60 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 125C) 4.5 mA J (Rated dc Voltage, T = 25C) 3.5 A J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2