NC7WP00L8X ON Semiconductor

TinyLogic ULP-A Dual 2-Input NAND Gate NC7WP00 The NC7WP00 is a dual 2input NAND gate in tiny footprint = packages. The device is designed to operate for V 0.9 V to 3.6 V. CC Features www.onsemi.com Designed for 0.9 V to 3.6 V V Operation CC MARKING 2.1 ns t at 3.3 V (Typ) PD DIAGRAMS Inputs/Outputs OverVoltage Tolerant up to 3.6 V I Supports Partial Power Down Protection OFF CCKK Source/Sink 2.6 mA at 3.3 V XYZ Available in US8 and MicroPak Packages These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant XXXX A1 B1 Y2 ALYW 76 5 A1 1 8 V CC V B1 2 7 Y1 CC GND 8 4 CC, XXXX = Specific Device Code Y2 3 6 B2 KK = 2Digit Lot Run Traceability Code XY = 2Digit Date Code Format GND45 A2 Z = Assembly Plant Code 1 23 A = Assembly Site Y1 B2 A2 L = Wafer Lot Number US8 UQFN8 YW = Assembly Start Week Figure 1. Pinout Diagrams (Top Views) ORDERING INFORMATION A1 See detailed ordering, marking and shipping information on & Y1 page 6 of this data sheet. B1 A2 & Y2 B2 Figure 2. Logic Symbol PIN ASSIGNMENT FUNCTION TABLE (Y = AB) Pin US8 UQFN8 Inputs Output 1 A1 Y1 A B Y 2 B1 B2 L L H 3 Y2 A2 L H H 4 GND GND H L H 5 A2 Y2 H H L 6 B2 B1 NOTE: H = HIGH Logic Level L = LOW Logic Level 7 Y1 A1 8 V V CC CC Publication Order Number: Semiconductor Components Industries, LLC, 2005 1 NC7WP00/D February, 2021 Rev. 1NC7WP00 MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +4.3 V CC V DC Input Voltage 0.5 to +4.3 V IN V DC Output Voltage ActiveMode (High or Low State) 0.5 to V + 0.5 V OUT CC TriState Mode (Note 1) 0.5 to +4.3 PowerDown Mode (V = 0 V) 0.5 to +4.3 CC I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA OUT I or I DC Supply Current per Supply Pin or Ground Pin 50 mA CC GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance (Note 2) US8 250 C/W JA MicroPak 210 P Power Dissipation in Still Air US8 500 mW D MicroPak 595 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage (Note 3) Human Body Model 2000 V ESD Charged Device Model 1000 I Latchup Performance (Note 4) 100 mA Latchup Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tristated. 2. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow per JESD517. 3. HBM tested to EIA / JESD22A114A. CDM tested to JESD22C101A. JEDEC recommends that ESD qualification to EIA/JESD22A115A (Machine Model) be discontinued. 4. Tested to EIA/JESD78 Class II. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 0.9 3.6 V CC V DC Input Voltage 0 3.6 V IN V DC Output Voltage ActiveMode (High or Low State) 0 V OUT CC TriState Mode (Note 1) 0 3.6 PowerDown Mode (V = 0 V) 0 3.6 CC T Operating Temperature Range 40 +85 C A t , t Input Transition Rise and Fall Time V = 3.3 V 0.3 V 0 10 ns/V r f CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2