MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) Complementary Silicon Plastic Power Transistors MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (I = 30 mAdc, I = 0) V 100 Vdc C B CEO(sus) Collector Cutoff Current (V = 60 Vdc, I = 0) I 0.7 mAdc CE B CEO Collector Cutoff Current (V = 100 Vdc, V = 0) I 100 Adc CE EB CES Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 50 Adc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain (I = 0.3 Adc, V = 4.0 Vdc) h 30 C CE FE (I = 3.0 Adc, V = 4.0 Vdc) 15 75 C CE CollectorEmitter Saturation Voltage (I = 6.0 Adc, I = 600 mAdc) V 1.5 Vdc C B CE(sat) BaseEmitter On Voltage (I = 6.0 Adc, V = 4.0 Vdc) V 2.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) f 3.0 MHz C CE test T SmallSignal Current Gain (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) h 20 C CE fe 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. T T A C 4.0 80 3.0 60 T C 2.0 40 T A 1.0 20 0 0 0 20 40 60 100 120 140 160 80 T, TEMPERATURE (C) Figure 1. Power Derating V CC 2.0 + 30 V T = 25C 1.0 J R V = 30 V 25 s C CC 0.7 I /I = 10 SCOPE +11 V C B 0.5 R B 0 0.3 t r 0.2 - 9.0 V D 1 t , t 10 ns 0.1 r f DUTY CYCLE = 1.0% 0.07 t V 5.0 V - 4 V d BE(off) 0.05 R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C 0.03 D MUST BE FAST RECOVERY TYPE, e.g.: 1 0.02 1N5825 USED ABOVE I 100 mA 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 B MSD6100 USED BELOW I 100 mA B I , COLLECTOR CURRENT (AMP) C Figure 2. Switching Time Test Circuit Figure 3. TurnOn Time