NL17SHT00 Single 2-Input NAND Gate/ CMOS Logic Level Shifter LSTTLCompatible Inputs The NL17SHT00 is a single gate 2input NAND fabricated with silicon gate CMOS technology. NL17SHT00 MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage V = 0 0.5 to 7.0 V OUT CC High or Low State 0.5 to V + 0.5 CC I Input Diode Current 20 mA IK I Output Diode Current V < GND V > V 20 mA OK OUT OUT CC I DC Output Current 25 mA OUT I DC Supply Current, V and GND 50 mA CC CC T Storage Temperature Range 65 to 150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J P Power Dissipation in Still Air at 85 C 50 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R I Latchup Performance Above V and Below GND at 125 C (Note 1) 100 mA LATCHUP CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 3.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage V = 0 0.0 5.5 V OUT CC High or Low State 0.0 V CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC Device Junction Temperature versus Time to 0.1% Bond Failures FAILURE RATE OF PLASTIC = CERAMIC Junction UNTIL INTERMETALLICS OCCUR Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 1 110 79,600 9.4 120 37,000 4.2 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature