NL17SZ08E Single 2-Input AND Gate The NL17SZ08E is a single 2input AND Gate in three tiny footprint packages. The device performs much as LCX multigate products in speed and drive. They should be used wherever the need for higher speed and drive are needed. www.onsemi.com Features Tiny SOT353 Package MARKING 2.7 ns T at 5.0 V (typ) PD 5 DIAGRAMS Source/Sink 24 mA at 3.0 V 1 Overvoltage Tolerant Inputs SC88A L2 M (SC705/SOT353) Chip Complexity: FETs = 20 DF SUFFIX Designed for 1.65 V to 5.5 V V Operation CC CASE 419A These Devices are PbFree, Halogen Free/BFR Free and are RoHS L2 = Specific Device Marking Compliant M = Date Code* = PbFree Package (Note: Microdot may be in either location) V IN B CC *Date Code orientation and/or position may 5 1 vary depending upon manufacturing location. IN A 2 PIN ASSIGNMENT GND OUT Y Pin Function 4 3 1 IN B 2 IN A 3 GND Figure 1. Pinout (Top View) 4 OUT Y 5 V CC IN A & OUT Y FUNCTION TABLE IN B Output Figure 2. Logic Symbol Input Y = AB A B Y L L L L H L H L L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 1 NL17SZ08E/DNL17SZ08E MAXIMUM RATINGS Symbol Parameter Value Units V DC Supply Voltage 0.5 to +6.5 V CC V DC Input Voltage 0.5 to +6.5 V IN V DC Output Voltage Active Mode, High or LOW State 0.5 to V + 0.5 V OUT CC Power Down Mode (V = 0 V) 0.5 to +6.5 CC I DC Input Diode Current 50 mA IK I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Sink Current 50 mA OUT I DC Supply Current per Supply Pin 100 mA CC T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance (Note 1) 350 C/W JA P Power Dissipation in Still Air at 85C 186 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R ESD ESD Classification Human Body Model (Note 2) 4000 V Charged Device Model (Note 3) 1000 I Latchup Performance Above V and Below GND at 125C (Note 4) 100 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A, rated to EIA/JESD22A114B. 3. Tested to JESD22C101A. 4. Tested to EIA/JESD78. www.onsemi.com 2