NLAS1053 2:1 Mux/Demux Analog Switches The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very high speed propagation delays and low ON resistances while maintaining CMOS www.onsemi.com low power dissipation. The device consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductors NLAS4053 MARKING analog and digital voltages that may vary across the full power supply DIAGRAM range (from V to GND). CC 8 The inhibit and select input pins have over voltage protection that allows voltages above V up to 7.0 V to be present without damage CC or disruption of operation of the part, regardless of the operating US8 8 AC M voltage. US SUFFIX CASE 493 1 Features High Speed: t = 1 ns (Typ) at V = 5.0 V 1 PD CC Low Power Dissipation: I = 2 A (Max) at T = 25C AC = Specific Device Code CC A M = Date Code High Bandwidth, Improved Linearity, and Low RDS ON = PbFree Package INH Pin Allows a Both Channels OFF Condition (With a High) (Note: Microdot may be in either location) RDS 25 , Performance Very Similar to the NLAS4053 ON Break Before Make Circuitry, Prevents Inadvertent Shorts Useful For Switching Video Frequencies Beyond 50 MHz FUNCTION TABLE Latchup Performance Exceeds 300 mA INH Select Ch 0 Ch 1 ESD Performance: HBM > 2000 V MM > 200 V, CDM > 1500 V H X OFF OFF Tiny US8 Package, Only 2.1 X 3.0 mm L L ON OFF These Devices are PbFree, Halogen Free/BFR Free and are RoHS L H OFF ON Compliant COM 1 V 8 CC ORDERING INFORMATION INH 2 7 CH0 Device Package Shipping NLAS1053USG US8 3000 / Tape & Reel N/C 3 6 CH1 (PbFree) For information on tape and reel specifications, 4 GND 5 Select including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Figure 1. Pin Assignment Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2015 Rev. 3 NLAS1053/DNLAS1053 MAXIMUM RATINGS Parameter Symbol Value Unit Positive DC Supply Voltage V 0.5 to +7.0 V CC Digital Input Voltage (Select and Inhibit) V 0.5 V is +7.0 V IN Analog Output Voltage (V or V ) V 0.5 V is V +0.5 V CH COM IS CC DC Current, Into or Out of Any Pin I 50 mA IK Storage Temperature Range T 65 to +150 C STG Lead Temperature, 1 mm from Case for 10 Seconds T 260 C L Junction Temperature under Bias T +150 C J Thermal Resistance 250 C/W JA P 250 mW Power Dissipation in Still Air at 85 C D Moisture Sensitivity MSL Level 1 Flammability Rating Oxygen Index: 30% 35% F UL 94 V0 0.125 in R ESD Withstand Voltage Human Body Model (Note 2) V > 2000 V ESD Machine Model (Note 3) 200 Charged Device Model (Note 4) N/A Latchup Performance Above V and Below GND at 85 C (Note 5) I 300 mA CC Latchup Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit Positive DC Supply Voltage V 2.0 5.5 V CC Digital Input Voltage (Select and Inhibit) V GND 5.5 V IN Static or Dynamic Voltage Across an Off Switch V GND V V IO CC Analog Input Voltage (CH, COM) V GND V V IS CC Operating Temperature Range, All Package Types T 55 +125 C A Input Rise or Fall Time V = 3.3 V 0.3 V t , t 0 100 ns/V cc r f (Enable Input) V = 5.0 V 0.5 V 0 20 cc Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 1 100 178,700 20.4 110 79,600 9.4 1 10 100 1000 120 37,000 4.2 TIME, YEARS 130 17,800 2.0 Figure 2. Failure Rate versus Time Junction Temperature 140 8,900 1.0 www.onsemi.com 2 NORMALIZED FAILURE RATE T = 130C J T = 120C J T = 110C J T = 100C J T = 90C J T = 80C J
