NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the UltraSmall 8 www.onsemi.com package. The use of advanced 0.6 CMOS process, improves the R ON MARKING resistance considerably compared to older higher voltage DIAGRAM technologies. 8 Features 8 US8 On Resistance is 20 Typical at 5.0 V A9 M US SUFFIX Matching is < 1.0 Between Sections CASE 493 1 2.06.0 V Operating Range Ultra Low < 5.0 pC Charge Injection 1 Ultra Low Leakage < 1.0 nA at 5.0 V, 25C A9 = Device Code Wide Bandwidth > 200 MHz, 3.0 dB M = Date Code* = PbFree Package 2000 V ESD (HBM) (Note: Microdot may be in either location) R Flatness 6.0 at 5.0 V ON Independent Enables One Positive, One Negative These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN ASSIGNMENT Compliant 1 NO1 2 COM1 3 IN2 4 GND NO1 1 8 V 5 CC NC2 6 COM2 7 IN1 COM1 2 7 IN1 8 V CC IN2 3 6 COM2 FUNCTION TABLE On/Off Analog Analog Enable Input Switch 1 Switch 2 GND45 NC2 L Off On H On Off Figure 1. Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2015 Rev. 7 NLAS325/DNLAS325 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to 7.0 V CC V DC Input Voltage 0.5 to 7.0 V I V DC Output Voltage 0.5 to 7.0 V O I DC Input Diode Current V < GND 50 mA IK I I DC Output Diode Current V < GND 50 mA OK O I DC Output Sink Current 50 mA O I DC Supply Current per Supply Pin 100 mA CC I DC Ground Current per Ground Pin 100 mA GND T Storage Temperature Range 65 to 150 C STG T Lead Temperature, 1.0 mm from Case for 10 Seconds 260 C L T Junction Temperature under Bias 150 C J Thermal Resistance (Note 1) 250 C/W JA P Power Dissipation in Still Air at 85C 250 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V Digital Select Input Voltage GND 5.5 V IN V Analog Input Voltage (NC, NO, COM) GND V V IS CC T Operating Temperature Range 55 125 C A t , t Input Rise or Fall Time, SELECT V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DEVICE JUNCTION TEMPERATURE VERSUS FAILURE RATE OF PLASTIC = CERAMIC TIME TO 0.1% BOND FAILURES UNTIL INTERMETALLICS OCCUR Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 1 100 178,700 20.4 110 79,600 9.4 1 10 100 1000 TIME, YEARS 120 37,000 4.2 130 17,800 2.0 Figure 2. Failure Rate vs. Time Junction Temperature 140 8,900 1.0 www.onsemi.com 2 NORMALIZED FAILURE RATE T = 130C J T = 120C J T = 110C J T = 100C J T = 90C J T = 80C J