NLU1GT125MUTCG ON Semiconductor

NLU1GT125 Non-Inverting 3-State Buffer, TTL Level LSTTLCompatible Inputs The NLU1GT125 MiniGate is an advanced CMOS highspeed noninverting buffer in ultrasmall footprint. The NLU1GT125 requires the 3 state control input OE to be set www.onsemi.com High to place the output in the high impedance state. MARKING The device input is compatible with TTLtype input thresholds and DIAGRAMS the output has a full 5.0 V CMOS level output swing. The NLU1GT125 input and output structures provide protection UDFN6 when voltages up to 7.0 V are applied, regardless of the supply voltage. 1.2 x 1.0 7M Features CASE 517AA 1 High Speed: t = 3.8 ns (Typ) V = 5.0 V PD CC Low Power Dissipation: I = 1 A (Max) at T = 25C CC A UDFN6 TTLCompatible Input: V = 0.8 V V = 2.0 V IL IH L M 1.0 x 1.0 CMOSCompatible Output: CASE 517BX V > 0.8 V V < 0.1 V Load OH CC OL CC 1 Power Down Protection Provided on inputs Balanced Propagation Delays UDFN6 D M 1.45 x 1.0 UltraSmall Packages CASE 517AQ NLV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ100 7 = Device Marking Qualified and PPAP Capable M = Date Code These are PbFree Devices ORDERING INFORMATION OE 1 6 V CC See detailed ordering and shipping information on page 4 of this data sheet. IN A 2 5 NC GND 3 4 OUT Y Figure 1. Pinout (Top View) OE OUT Y IN A Figure 2. Logic Symbol PIN ASSIGNMENT 1 OE FUNCTION TABLE 2 IN A Input Output 3 GND AYOE 4 OUT Y L L L 5NC H L H X H Z 6V CC Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2019 Rev. 7 NLU1GT125/DNLU1GT125 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 12.5 mA O I DC Supply Current Per Supply Pin 25 mA CC I DC Ground Current per Ground Pin 25 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R I Latchup Performance Above V and Below GND at 125C (Note 2) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 3.3 V 0.3 V 0 100 ns/V CC V = 5.0 V 0.5 V 0 20 CC www.onsemi.com 2