NLU1GT126 Non-Inverting 3-State Buffer, TTL Level LSTTLCompatible Inputs The NLU1GT126 MiniGate is an advanced CMOS highspeed www.onsemi.com noninverting buffer in ultrasmall footprint. The NLU1GT126 requires the 3 state control input (OE) to be set MARKING Low to place the output in the high impedance state. DIAGRAMS The device input is compatible with TTLtype input thresholds and the output has a full 5.0 V CMOS level output swing. UDFN6 1.2 x 1.0 9M The NLU1GT126 input and output structures provide protection CASE 517AA when voltages up to 7.0 V are applied, regardless of the supply 1 voltage. UDFN6 Features X M 1.0 x 1.0 CASE 517BX High Speed: t = 3.8 ns (Typ) V = 5.0 V PD CC 1 Low Power Dissipation: I = 2 A (Max) at T = 25C CC A TTLCompatible Input: V = 0.8 V V = 2.0 V IL IH UDFN6 CMOSCompatible Output: X M 1.45 x 1.0 V > 0.8 V V < 0.1 V Load CASE 517AQ OH CC OL CC 1 Power Down Protection Provided on inputs Balanced Propagation Delays 9 = Device Marking M = Date Code UltraSmall Packages These are PbFree Devices ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. OE 1 6 V CC IN A 2 5 NC GND 3 4 OUT Y Figure 1. Pinout (Top View) OE OUT Y IN A Figure 2. Logic Symbol PIN ASSIGNMENT 1 OE FUNCTION TABLE 2 IN A Input Output 3 GND AYOE 4 OUT Y L H L 5NC H H H X L Z 6V CC Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 5 NLU1GT126/DNLU1GT126 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 12.5 mA O I DC Supply Current Per Supply Pin 25 mA CC I DC Ground Current per Ground Pin 25 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R I Latchup Performance Above V and Below GND at 125C (Note 2) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 3.3 V 0.3 V 0 100 ns/V CC V = 5.0 V 0.5 V 0 20 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2