NLVHCT244ADTR2G ON Semiconductor

MC74HCT244A Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver with LSTTL-Compatible Inputs HighPerformance SiliconGate CMOS MC74HCT244A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V fields. However, precautions must in CC be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 35 mA out V should be constrained to the out I DC Supply Current, V and GND Pins 75 mA range GND (V or V ) V . CC CC in out CC Unused inputs must always be P Power Dissipation in Still Air, SOIC Package 500 mW D tied to an appropriate logic voltage TSSOP Package 450 level (e.g., either GND or V ). CC Unused outputs must be left open. T Storage Temperature 65 to +150 C stg T Lead Temperature, 1 mm from Case for 10 Seconds C L (SOIC or TSSOP Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 4.5 5.5 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time (Figure 2) 0 500 ns r f Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit V 55 to CC V 25 C Symbol Parameter Test Conditions 85 C 125 C Unit V Minimum HighLevel Input Voltage V = 0.1 V or V 0.1 V 4.5 2 2 2 V IH out CC 5.5 2 2 2 I 20 A out V Maximum LowLevel Input V = 0.1 V or V 0.1 V 4.5 0.8 0.8 0.8 V IL out CC Voltage 5.5 0.8 0.8 0.8 I 20 A out V Minimum HighLevel Output V = V or V 4.5 4.4 4.4 4.4 V OH in IH IL Voltage I 20 A 5.5 5.4 5.4 5.4 out V = V or V in IH IL I 6 mA 4.5 3.98 3.84 3.7 out V Maximum LowLevel Output V = V or V 4.5 0.1 0.1 0.1 V OL in IH IL Voltage I 20 A 5.5 0.1 0.1 0.1 out V = V or V in IH IL I 6 mA 4.5 0.26 0.33 0.4 out I Maximum Input Leakage Current V = V or GND 5.5 0.1 1.0 1.0 A in in CC I Maximum ThreeState Leakage Output in HighImpedance State 5.5 0.5 5.0 10 A OZ Current V = V or V V = V or GND in IL IH out CC I Maximum Quiescent Supply V = V or GND I = 0 A 5.5 4 40 160 A CC in CC out Current (per Package) I Additional Quiescent Supply V = 2.4 V, Any One Input 55 C 25 C to 125 C CC in Current V = V or GND, Other Inputs in CC l = 0 A 2.9 2.4 out 5.5 mA 1. Total Supply Current = I + I . CC CC