3 6 NLX1G332 3-Input OR Gate The NLX1G332 is an advanced highspeed 3input CMOS OR gate in ultrasmall footprint. The NLX1G332 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. www.onsemi.com Features High Speed: t = 2.4 ns (Typ) V = 5.0 V PD CC MARKING Designed for 1.65 V to 5.5 V V Operation CC DIAGRAMS Low Power Dissipation: I = 1 A (Max) at T = 25C CC A ULLGA6 M 24 mA Balanced Output Source and Sink Capability 1.0 x 1.0 CASE 613AD Balanced Propagation Delays 1 Overvoltage Tolerant (OVT) Input Pins UltraSmall Packages ULLGA6 M 1.2 x 1.0 These are PbFree Devices CASE 613AE 1 A 1 6 C ULLGA6 Y M 1.45 x 1.0 CASE 613AF 1 GND 2 5 V CC UDFN6 6 M 1.0 x 1.0 CASE 517BX B 3 4 Y 1 UDFN6 M 1.2 x 1.0 Figure 1. Pinout (Top View) CASE 517AA 1 PIN ASSIGNMENT UDFN6 6 M Pin Function 1.45 x 1.0 A CASE 517AQ 1 A B 1 1 Y 2 GND C 3B X = Device Marking M = Date Code 4 Y Figure 2. Logic Symbol = PbFree Package 5V CC 6C ORDERING INFORMATION FUNCTION TABLE See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Input Output AB CY H X X H X H X H X X H H L L L L H HIGH Logic Level L LOW Logic Level X = Either LOW or HIGH Logic Level Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2014 Rev. 4 NLX1G332/D ANLX1G332 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA O I DC Supply Current Per Supply Pin 100 mA CC I DC Ground Current per Ground Pin 100 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J Thermal Resistance (Note 1) 496 C/W JA P Power Dissipation in Still Air 85C 252 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD Machine Model (Note 3) >200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125 C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage Operating 1.65 5.5 V CC Data Retention Only 1.5 5.5 V Digital Input Voltage (Note 6) 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 1.8 V 0.15 V 0 20 ns/V CC V = 2.5 V 0.2 V 0 20 CC V = 3.3 V 0.3 V 0 10 CC V = 5.0 V 0.5 V 0 5 CC 6. Unused inputs may not be left open. All inputs must be tied to a high or lowlogic input voltage level. www.onsemi.com 2