NOII4SM6600A 6.6 Megapixel CMOS Image Sensor Features 2210 (H) x 3002 (V) Active Pixels 3.5 m x 3.5 m Square Pixels www.onsemi.com 1 inch Optical Format Monochrome Output Frame Rate: 5 fps for Active Window of 2210 x 3002 89 fps for Active Window of 640 x 480 High Dynamic Range Modes: Double Slope, Non Destructive Read out (NDR) Electronic Rolling Shutter Master Clock: 40 MHz Single 2.5 V Supply 3.3 V Supply for Extended Dynamic Range 30C to +65C Operational Temperature Range 68-Pin LCC Package Power Dissipation: 225 mW These Devices are PbFree and are RoHS Compliant Applications Machine Vision Figure 1. IBIS46600 Image Sensor Biometry Document Scanning Description The IBIS4-6600 is a solid-state CMOS image sensor that integrates complete analog image acquisition, and a digitizer and digital signal processing system on a single chip. This image sensor has a resolution of 6.6 MPixel with 2210 x 3002 active pixels. The image size is fully programmable for user-defined windows. The pixels are on a 3.5 m pitch. The user programmable row and column start and stop positions enable windowing down to 2x1 pixel window for digital zoom. Subsampling reduces resolution while maintaining the constant field of view. The analog video output of the pixel array is processed by an on-chip analog signal pipeline. Double Sampling (DS) eliminates the fixed pattern noise. The programmable gain and offset amplifier maps the signal swing to the ADC input range. A 10-bit ADC converts the analog data to a 10-bit digital word stream. The sensor uses a three-wire Serial-Parallel (SPI) interface. It operates with a single 2.5 V power supply and requires only one master clock for operation up to 40 MHz. It is housed in a 68-pin ceramic LCC package. This data sheet enables the development of a camera system, based on the described timing and interfacing given in the following sections. ORDERING INFORMATION Marketing Part Number Description Package NOII4SM6600A-QDC Mono with Glass 68 pin LCC NOTE: For more information, see Ordering Code Definition on page 29. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2016 Rev. 15 NOII4SM6600A/DNOII4SM6600A SPECIFICATIONS GENERAL SPECIFICATIONS Parameter Specification Remarks Pixel Architecture 3T-Pixel Pixel Size 3.5 m x 3.5 m The resolution and pixel size results in a 7.74 mm x 10.51 mm optical active area. Resolution 2210 x 3002 Pixel Rate 40 MHz Using a 40 MHz system clock and 1 or 2 parallel outputs Shutter Type Electronic Rolling Shutter Full Frame Rate 5 frames/second Increases with ROI read out and/or subsampling ELECTRO OPTICAL SPECIFICATIONS Parameter Specification Remarks FPN (local) <0.20%, 2 LSB10 %RMS of saturation signal PRNU (local) <1.5% RMS of signal level - Conversion Gain 43 V/e At output (measured) Output Signal Amplitude 0.6 V At nominal conditions - Saturation Charge 21500 e 2 Sensitivity (peak) At 650 nm 411 V.m /W.s 2 (85 lux = 1 W/m ) 4.83 V/lux.s 2 Sensitivity (visible) 400-700 nm 328 V.m /W.s 2 2.01 V/lux.s (163 lux = 1 W/m ) Peak QE * FF 25% Average QE*FF = 22% (visible range) Peak Spectral Response 0.13 A/W Average SR*FF = 0.1 A/W (visible range) See the section Spectral Response Curve on page 4. Fill Factor 35% Light sensitive part of pixel (measured) Dark Current 3.37 mV/s Typical value of average dark current of the whole pixel array (at 21C) 78 e-/s Dark Signal Non Uniformity 8.28 mV/s Dark current RMS value (at 21C) 191 e-/s Temporal Noise 24 RMS e- Measured at digital output (in the dark) Signal/Noise Ratio 895:1 (40 dB) Measured at digital output (in the dark) Dynamic Range 59 dB Spectral Sensitivity Range 400 - 1000 nm Optical Cross Talk 15% To the first neighboring pixel 4% To the second neighboring pixel Power Dissipation 225 mW Typical (including ADCs) www.onsemi.com 2