NSS20201MR6T1G 20 V, 3 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS20201MR6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA, I = 0) 20 C B CollectorBase Breakdown Voltage V V (BR)CBO (I = 0.1 mA, I = 0) 40 C E EmitterBase Breakdown Voltage V V (BR)EBO (I = 0.1 mA, I = 0) 5.0 E C Collector Cutoff Current I A CBO (V = 40 V, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I A CES (V = 20 V) 0.1 CES Emitter Cutoff Current I A EBO (V = 5.0 V) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 1.0 mA, V = 5.0 V) 300 C CE (I = 0.5 A, V = 5.0 V) 300 C CE (I = 1.0 A, V = 5.0 V) 200 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 1.0 A, I = 100 mA) 0.150 C B (I = 0.5 A, I = 50 mA) 0.100 C B (I = 0.1 A, I = 10 mA) 0.025 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.1 A) C B 0.95 BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.90 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz 200 C CE Output Capacitance (f = 1.0 MHz) C pF obo 15 3. Pulsed Condition: Pulse Width 300 sec, Duty Cycle 2%.