NSS20300MR6T1G 20 V, 5 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS20300MR6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 20 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 30 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 6.0 E C Collector Cutoff Current I Adc CBO (V = 20 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I Adc CES (V = 20 Vdc) 0.1 CES Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.1 EB ON CHARACTERISTICS (1) DC Current Gain h FE (I = 1.0 A, V = 1.5 V) 100 C CE (I = 1.5 A, V = 2.0 V) 100 230 400 C CE (I = 2.0 A, V = 2.0 V) 100 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.10 A, I = 0.010 A) 0.010 0.015 C B (I = 1.0 A, I = 0.010 A) 0.127 0.145 C B (I = 2.0 A, I = 0.02 A) 0.250 0.320 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1A, I = 0.010 A) 0.85 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 2.0 A, V = 3.0 V) 0.875 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) C 650 pF EB IBO Output Capacitance (V = 3.0 V, f = 1.0 MHz) C 100 pF CB OBO 3. Pulsed Condition: Pulse Width 300 sec, Duty Cycle 2%.