NSS30071MR6T1G 30 V, 0.7 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS30071MR6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V CollectorBase Breakdown Voltage (I = 100 Adc) 40 Vdc (BR)CBO C V CollectorEmitter Breakdown Voltage (I = 10 mAdc) 30 Vdc (BR)CEO C V EmitterBase Breakdown Voltage (I = 100 Adc) 5.0 Vdc (BR)EBO E I Collector Cutoff Current (V = 25 Vdc, I = 0 Adc) 1.0 Adc CBO CB E 10 (V = 25 Vdc, I = 0 Adc, T = 125C) CB E A I Emitter Cutoff Current (V = 5.0 Vdc, I = 0 Adc) 10 Adc EBO EB C ON CHARACTERISTICS h DC Current Gain (V = 3.0 Vdc, I = 100 mAdc) 150 Vdc FE CE C V CollectorEmitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc) 0.25 Vdc CE(sat) C B V CollectorEmitter Saturation Voltage (I = 700 mAdc, I = 70 mAdc) 0.4 Vdc CE(sat) C B V BaseEmitter Saturation Voltage (I = 700 mAdc, I = 70 mAdc) 1.1 Vdc BE(sat) C B V CollectorEmitter Saturation Voltage (I = 700 mAdc, V = 1.0 Vdc) 1.0 Vdc BE(on) C CE