NSS40300DDR2G Dual 40 V, 6.0 A, Low V PNP Transistor CE(sat) 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS40300DDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) P 576 mW D T = 25C A Derate above 25C 4.6 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) 217 C/W R JA Total Device Dissipation (Note 2) P 676 mW D T = 25C A Derate above 25C 5.4 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) 185 C/W R JA DUAL HEATED (Note 3) Total Device Dissipation (Note 1) P 653 mW D T = 25C A Derate above 25C 5.2 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 191 C/W JA Total Device Dissipation (Note 2) P 783 mW D T = 25C A Derate above 25C 6.3 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 160 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 10 mm , 1 oz. copper traces, still air. 2 2. FR4 100 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices.